Dependence of the Degradation Rate of Ga_<1-x>Al_xAs Buried Hetero-Structure Injection Lasers on Optical Flux Density
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-03-05
著者
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KAJIMURA Takashi
Central Research Laboratory. Hitachi Ltd.
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Ito Ryoichi
Central Research Laboratory Hitachi Ltd.
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Saito Kazutoshi
Central Research Laboratory Hitachi Ltd.
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SAITO Kunimi
Department of Physics, Tohoku University
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SHIGE Noriyuki
Central Research Laboratory, Hitachi, Ltd.
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Kajimura Takashi
Central Research Laboratory Hitachi Ltd.
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Shige Noriyuki
Central Research Laboratory Hitachi Ltd.
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Ito Ryoichi
Central Reserach Laboratory Hitachi Ltd.
関連論文
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- The L_ Edges of Soft X-Ray Emission Bands of Na,Mg,and Al Metals
- A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD
- Highly Reliable GaAlAs Visible-Light-Emitting MCSP Lasers : B-4: LD AND LED-2
- Spectral Behaviors of Spontaneously Pulsing Double-Heterostructure Injection Lasers
- High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
- Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mW
- Improvement of Crystal Composition in Ga_Al_xAs LPE Layers Grown under Conditions of Constant Cooling Rate
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
- High-Power Operation of Self-Sustained Pulsating AlGaAs Semiconductor Lasers with Multiquantum Well Active Layer (SOLID STATE DEVICES AND MATERIALS 1)
- Reduction of Threshold Current of Buried-Heterostructure Injection Lasers : B-6: SEMICONDUCTOR LASERS (I)
- X-Ray Topographic Study of Lattice Defects Related with Degradation of GaAs-Ga_Al_xAs Double-Heterostructure Lasers : B-7: SEMICONDUCTOR LASERS (II)
- Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure Crystals
- A Simple Method for Obtaining Luminescent Pattern of Double Heterostructure Crystals
- Diamagnetism of Glassy Carbons
- Dependence of the Degradation Rate of Ga_Al_xAs Buried Hetero-Structure Injection Lasers on Optical Flux Density
- Carrier Concentration Dependence of Piezoresistance in p-PbTe