Highly Reliable GaAlAs Visible-Light-Emitting MCSP Lasers : B-4: LD AND LED-2

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-02-28

著者

• KAJIMURA Takashi

  Central Research Laboratory. Hitachi Ltd.

• AIKI Kunio

  Takasaki Works, Hitachi, Ltd.

• Aiki Kunio

  Takasaki Works Hitachi Ltd.

• KASHIWADA Yasutoshi

  Central Research Laboratory, Hitachi Ltd.

• OUCHI Hirobumi

  Central Research Laboratory, Hitachi Ltd.

• Ouchi Hirobumi

  Central Research Laboratory Hitachi Ltd.

• Kajimura Takashi

  Central Research Laboratory Hitachi Ltd.

• Kashiwada Yasutoshi

  Central Research Laboratory Hitachi Ltd.

関連論文

• Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer
• Improved Self-Aligned Structure for GaAlAs High-Power Lasers
• Degradation Characteristics of Ga_Al_xAs Visible Diode Lasers : B-3: LASER
• Lateral Far-Field Interference Pattern of Buried Heterostructure Lasers
• Dislocations in Strontium Barium Niobate
• A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD
• Highly Reliable GaAlAs Visible-Light-Emitting MCSP Lasers : B-4: LD AND LED-2
• High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
• High-Power Operation of Self-Sustained Pulsating AlGaAs Semiconductor Lasers with Multiquantum Well Active Layer (SOLID STATE DEVICES AND MATERIALS 1)
• Dependence of the Degradation Rate of Ga_Al_xAs Buried Hetero-Structure Injection Lasers on Optical Flux Density
• Characterization of Dislocations in β'-Gd_2(MoO_4)_3

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