High-Power Operation of Self-Sustained Pulsating AlGaAs Semiconductor Lasers with Multiquantum Well Active Layer (SOLID STATE DEVICES AND MATERIALS 1)
スポンサーリンク
概要
- 論文の詳細を見る
Improvement of kink level in self-sustained pulsating multiquantum well (MQW) lasers is mainly examined by controlling the built-in refractive index difference parallel to the junction. Furthermore, it is shown that the offset power level of self-pulsation is suppressed by increasing the effective refractive index difference. Kink level can be improved to over 30 mW in lasers without facet coatings. Relative intensity noise of 10^<-13>Hz^<-1> under optical feedback of 3〜4% is also attained from 4 to 7 mW. With antireflective and reflective facet coatings, stable transverse-mode operation over 70 mW is achieved.
- 社団法人応用物理学会の論文
- 1989-11-20
著者
-
KAJIMURA Takashi
Central Research Laboratory. Hitachi Ltd.
-
TANAKA Toshiaki
Central Research Laboratory, Hitachi Ltd.,
-
Kawano Toshihiro
Central Research Laboratory Hitachi Ltd.
-
Kajimura Takashi
Central Research Laboratory Hitachi Ltd.
-
Tanaka Toshiaki
Central Research Laboratory Hitachi Ltd.
-
TANAKA Toshiaki
Central Research Laboratory, Hitachi, Ltd.
-
KAJIMURA Takashi
Central Research Laboratory, HITACHI, Ltd.
関連論文
- Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer
- In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
- Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-μm-Wavelength Laser on GaAs
- Improved Self-Aligned Structure for GaAlAs High-Power Lasers
- Degradation Characteristics of Ga_Al_xAs Visible Diode Lasers : B-3: LASER
- Strained Single-Quantum-Well AlGaInP Laser Diodes with Asymmetric Waveguiding Structure
- A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD
- Highly Reliable GaAlAs Visible-Light-Emitting MCSP Lasers : B-4: LD AND LED-2
- High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
- High-Power Operation of Self-Sustained Pulsating AlGaAs Semiconductor Lasers with Multiquantum Well Active Layer (SOLID STATE DEVICES AND MATERIALS 1)
- Dependence of the Degradation Rate of Ga_Al_xAs Buried Hetero-Structure Injection Lasers on Optical Flux Density