Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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Uchida K
Fukui Inst. Technol. Fukui Jpn
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Uchida Kenji
Central Research Laboratory Hitachi Ltd.
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YAMASHITA Sigeo
Central Research Laboratory. Hitachi Ltd.
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KAJIMURA Takashi
Central Research Laboratory. Hitachi Ltd.
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Nakatsuka S
Central Research Laboratory Hitachi Ltd.
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Uchida Kenji
Central R&d Laboratory Kobayashi Pharmaceutical Co. Ltd.
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Uchida Kenji
Central Research Laboratory. Hitachi Ltd.
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Yamashita S
Univ. Tsukuba Ibaraki Jpn
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Kajimura T
Central Research Laboratory. Hitachi Ltd.
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Kajimura Takashi
Central Research Laboratory Hitachi Ltd.
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- Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer
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- Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
- Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy
- Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN
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