A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD
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概要
- 論文の詳細を見る
A new transverse-mode stabilizing self-aligned structure for (GaAl)As laser diodes by metal organic chemical vapor deposition (MOCVD) is developed. This structure is characterized by an n-GaAs layer grown selectively outside of a mesa stripe using an SiO_2 mask. To control the distance between active and n-GaAs layers a highly selective (GaAl)As etching technique by boiled HCl is used. Furthermore, the laser diodes can operate in the fundamental transverse-mode at light output power up to 70 mW with a threshold current of 60 mA under CW operation at lasing wavelengths of 750-760 nm.
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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KAJIMURA Takashi
Central Research Laboratory. Hitachi Ltd.
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Ono Yuuichi
Central Research Laboratory Hitachi Ltd.
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NAKATSUKA Shin-ichi
Laboratory of Organic Chemistry, Nagoya University
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Nakatsuka Shin-ichi
Laboratory Of Organic Chemistry Nagoya University
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Nakatsuka Shin-ichi
Central Research Laboratory Hitachi Ltd.
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Kajimura Takashi
Central Research Laboratory Hitachi Ltd.
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