Index-Guide GaInNAs Laser Diode for Optical Communications

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1997-09-16

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関連論文

Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
Index-Guide GaInNAs Laser Diode for Optical Communications
Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
Analysis of Spot Shape Behavior on a Spot-Size Controllable Laser Diode
Controlled Spot Size Laser Diode with Flared Stripe and Twin Stripe Modulator at Flare Base
Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer
Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multiple Quantum Welts
Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
Unintentional source incorporation in plasma-assisted molecular beam epitaxy
Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
Infrared Absorption Spectrum of GaInNAs
Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
Index-Guide GaInNAs Laser Diode for Optical Communications
GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
Corrugation-Pitch-Modulated Distributed Feedback Lasers with Ultranarrow Spectral Linewidth
Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
Photosensing Resolution of Wireless Communication Chip in Inhomogeneous RF-Magnetic Field
Characterization of the Refractive Index of Lateral-Oxidation-Formed Al_xO_y by Spectroscopic Ellipsometry
In situ Annealing of GaInNAs up to 600°C
Fabrication of -Oriented Si Film with a Ni/Ti Layer by Metal Induced Crystallization : Semiconductors
Radio Frequency Identification Sensor Chips with Anticollision Algorithm for Simultaneous Detection of Multiple DNA Targets
Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)

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