GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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1996-02-01

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関連論文

Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
Index-Guide GaInNAs Laser Diode for Optical Communications
Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching
Beam Expander-Integrated Lasers Grown by Single-Step MOVPE
Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
Improved Self-Aligned Structure for GaAlAs High-Power Lasers
Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
Very-Low-Current and High-Speed Switching Operation of InAlGaAs/InAlAs/InP Mach-Zehnder Interferometer-Type Photonic Switch
Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
Direct Wafer Bonding Technique Aiming for Free-Material and Free-Orientation Integration of Semiconductor Materials
Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
Infrared Absorption Spectrum of GaInNAs
Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
Index-Guide GaInNAs Laser Diode for Optical Communications
GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
Compact and Low-Power-Consumption 40-Gbit/s, 1.55-μm Electro-Absorption Modulators(Optical Active Devices and Modules, Recent Progress in Optoelectronics and Communications)
Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained Quantum Well Lasers with a Modulation-Doped Structure
Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells
Tight-Binding Analysis of the Optical Matrix Element in Wurtzite- and Zincblende-GaN Quantum Wells
High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm Vertical-Cavity Surface-Emitting Lasers
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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