Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
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概要
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Our recent progress in improving the performance of the GaInNAs laser is fully reviewed here. We improved the crystal quality of GaInNAs by optimizing the conditions for its grown by gas-source molecular beam epitaxy(MBE) using N radicals as a N source. We found that the temperature window for obtaining GaInNAs with high crystal quality, good surface morphology, and good photoluminescence(PL) characteristics is smaller than that for obtaining this kind of GaInAs. Like dopant atoms such as Si or Be in GaAs, the N radicals produced by an RF discharge have a high sticking coefficient. Their use is therefore effective when we want to increase and control the N content of GaInNAs. We found that the AsH_3-flow-rate mainly affected crystal quality of GaInNAs rather than incorporation of nitrogen atoms. We also investigated the effects of thermal annealing on the optical properties of as-grown GaInNAs layers and found that it greatly increased the PL intensity and produced the large shift in the PL wavelength. The absorption spectra of the GaInNAs bulk layer revealed that the large shift in the PL wavelength is probably caused by a bandgap shift in the GaInNAs well layer, and cathodeluminescence measurements revealed that the increased PL intensity is due to the improved emission being more uniform spatially: uniformity from the entire region;in comparison, nonuniform dot-like regions exist in an as-grown GaInNAs layer. Optimizing the growth conditions and using thermal annealing effect, we made a 1.3-μm GaInNAs/GaAs single-quantum-well laser that has a high characteristic temperature(215K)under pulsed operation. To our knowledge, this is the highest characteristic temperature reported for a 1.3-μm band-edge emitter suitable for used in optical-fiber communication systems. The use of GaInNAs as an active layer is, therefore, very promising for the fabrication of long-wavelength laser diodes with excellent high-temperature performance.
- 社団法人電子情報通信学会の論文
- 2000-06-25
著者
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Kondow M
Central Research Laboratory Hitachi Ltd.
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KITATANI Takeshi
RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.
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NAKAHARA Koji
RWCP Optical Interconnection Hitachi Laboratory
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Kondow M
Hitachi Ltd. Tokyo Jpn
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Kondow Masahiko
Graduate School Of Engineering Osaka University
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TANAKA Toshiaki
The authors are with NTT Wireless Systems Laboratories
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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KITATANI Takeshi
The authors are with RWCP Optical Interconnection Hitachi Laboratory, c
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KONDOW Masahiko
o Central Research Laboratory, Hitachi, Ltd.
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NAKAHARA Kouji
The authors are with RWCP Optical Interconnection Hitachi Laboratory, c
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TANAKA Toshiaki
o Central Research Laboratory, Hitachi, Ltd.
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Tanaka T
Kddi R & D Laboratories Inc.
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Kitatani T
Hitachi Ltd. Central Research Laboratory
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Nakahara Kouji
Fundamental And Environmental Research Laboratories Nec Corporation
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KONDOW Masahiko
The authors are with RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laborator
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