Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
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概要
- 論文の詳細を見る
The temperature compensation technique of InGaP/GaAs power heterojunction bipolar transistor(HBT)with novel bias circuit using Schottky diodes has been developed. The variation in the quiescent current to the temperaure is less than 30% from -30℃ to 90℃ by this technique, where that is about 125% by the conventional bias circuit. The RF performance of the power HBT MMIC with novel bias circuit shows flat temperature characteristics enough to be used for power application of wireless communications.
- 社団法人電子情報通信学会の論文
- 2001-10-01
著者
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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MURAYAMA Keiichi
Discrete Division, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
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Murayama Keiichi
Discrete Division Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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