Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Uemoto Yasuhiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Matsuo Hisayoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueno Hiroaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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NAKAZAWA Kazushi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Matsuo Hisayoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nakazawa Kazushi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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