Terahara Takafumi | The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator

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概要

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著作論文

Pre- and Post-Dispersion Compensation in Long-Haul WDM Transmission System
High Alumina Co-Doped Silica EDFA and Its Gain-Equalization in Long-Haul WDM Transmission System
Gain Equalizer in Long-Haul WDM Transmission System(Special Issue on High-Capacity WDM/TDM Networks)
Interference Cancellation Characteristics of a BSCMA Adaptive Array Antenna with a DBF Configuration
Implementation of a Digital Signal Processor in a DBF Self-Beam-Steering Array Antenna
An ASIC Implementation Scheme to Realize a Beam Space CMA Adaptive Array Antenna
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide
Normally-off AlGaN/GaN MIS-HFETs Using Non-polar a-Plane
Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire
Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Advanced SOI Devices Using CMP and Wafer Bonding
Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
High-Speed and Low-Power n^+-p^+ Double-Gate SOI CMOS

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