NISHIJIMA Masaaki | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd

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著作論文

Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Low Power Dissipation Single-Supply MMIC Power Amplifier for 5.8 GHz Electronic Toll Collection System (Special Issue on High-Frequency/speed Devices in the 21st Century)
200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W

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