Yanagihara Manabu | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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概要
- YANAGIHARA Manabuの詳細を見る
- 同名の論文著者
- Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltdの論文著者
関連著者
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Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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LI Ming
Panasonic Boston Laboratory, Panasonic Technologies Company
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Li Ming
Panasonic Boston Laboratory Panasonic Technologies Company
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Nagai Shuichi
Panasonic Boston Laboratory, Panasonic Technologies Company
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Ishida Hidetoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Nagai Shuichi
Panasonic Boston Laboratory Panasonic Technologies Company
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ueda D
Matsushita Electronics Corp. Takatsuki‐shi Jpn
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Uemoto Yasuhiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Tsurumi Naohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Matsuo Hisayoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Daisuke
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Matsuo Hisayoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda D
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
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Murata Tomohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Shibata Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Sakai Hiroyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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KURODA Masayuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Kuroda Masayuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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INADA Masanori
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Inada Masanori
Semiconductor Research Center Matsushita Electric Industrial Co. Lid.
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ISHII Motonori
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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MURAYAMA Keiichi
Discrete Division, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
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Ota Y
Semiconductor Research Center Matsushita Electric Industrial Co. Lid.
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Ueno Hiroaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ishii Motonori
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ota Yorito
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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NAKAZAWA Kazushi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Murayama Keiichi
Discrete Division Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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RYOJI Akira
Semiconductor Research Center, Matsushita Electric Industrial Co., Lid.
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Ryoji A
Matsushita Electric Industrial Co. Ltd. Osaka
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Research Center Matsushita Electric Industrial Co. Lid.
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Nakazawa Kazushi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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OTA Yorito
Semiconductor Research Center, Matsushita Electric Industrial Co., Lid.
著作論文
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
- An Npn AlGaAs/GaAs Collector-up HBT with an H^+ -Implanted High Resistivity Layer under the External p^+ -GaAs Base