Nagai Shuichi | Panasonic Boston Laboratory Panasonic Technologies Company
スポンサーリンク
概要
関連著者
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LI Ming
Panasonic Boston Laboratory, Panasonic Technologies Company
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Li Ming
Panasonic Boston Laboratory Panasonic Technologies Company
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Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nagai Shuichi
Panasonic Boston Laboratory, Panasonic Technologies Company
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Ishida Hidetoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Yanagihara Manabu
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nagai Shuichi
Panasonic Boston Laboratory Panasonic Technologies Company
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Yanagihara M
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yanagihara Manabu
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ishida Hidetoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ueda D
Matsushita Electronics Corp. Takatsuki‐shi Jpn
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Ueda D
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
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Uemoto Yasuhiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Murata Tomohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Shibata Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Tsurumi Naohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Matsuo Hisayoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Ueda Daisuke
Semiconductor Device Research Center Matsushita Electronics Corporation
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Sakai Hiroyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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KURODA Masayuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
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Kuroda Masayuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Nishitsuji M
Matsushita Electronics Corp. Nagaokakyo‐shi Jpn
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Matsuo Hisayoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Nisijima Masaaki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
著作論文
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)
- AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire(Session9B: GaN and SiC Device Process Technology)