Ueda Daisuke | Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

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著作論文

Properties of SiO_2-M_xO_y Composites Doped with the Europium(III) Di(1,10-phenanthroline) Complex
ORMOSIL Composite Phosphors Incorporated with Lanthanide Complexes
Reversible Valence Change of the Europium Ion Doped in Alkaline-earth Tetraborates
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
A GaAs Single Voltage Controlled RF Switch IC
High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal

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