A GaAs Single Voltage Controlled RF Switch IC
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概要
- 論文の詳細を見る
A new GaAs monolithic switch IC that can be operated with a single positive control voltage is developed. The implemented IC is provided two different biasing configurations with the switching FETs. Each FET can be biased independently by large capacitors fabricated employing the BST (Barium Strontium Titanate) technology. The fabricated SPDT (Single-Pole-Double-Throw) switch IC shows insertion loss less than 1.0 dB and isolation over 25 dB in the frequency range of 0.1 GHz to 1.9 GHz with a single control voltage of 3 V.
- 社団法人電子情報通信学会の論文
- 1995-08-25
著者
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ueda D
Matsushita Electronics Corp. Takatsuki‐shi Jpn
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Ueda D
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
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MIYATSUJI Kazuo
Electronics Research Laboratory, Matsushita Electronics Corporation
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UEDA Daisuke
Electronics Research Laboratory, Matsushita Electronics Corporation
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Ueda Daisuke
Electronics Research Laboratory Matsushita Electronics Corporation
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Miyatsuji K
Electronics Research Laboratory Matsushita Electronics Corporation
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