Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
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概要
- 論文の詳細を見る
The off-state shunt GaAs FET, which is the most important for low distortion operation of the high power RF switch IC, is a very complicated device to analyze the RF voltage. Because the conventional measurement method has an influence on the behavior of the switch, it has not provided the correct measurement value. In this paper, we have realized a measurement method without touching the surface of the switch IC using EO-probe. As a result we achieved extremely low second and third harmonics of 70.5 dBc and 75.2 dBc, respectively at the input power of 35 dBm by adoptin SPDT switch IC composed of the multi-gate FET for the thru FET and the stacked-gate FET.
- 社団法人電子情報通信学会の論文
- 2002-12-01
著者
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ueda Daisuke
Semiconductor Device Research Center Matsushita Electronics Corporation
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Anda Yoshiharu
Discrete Device Division Matsushita Electronics Corporation
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MAKIOKA Satoshi
Discrete Device Division, Matsushita Electronics Corporation
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Makioka Satoshi
Discrete Device Division Matsushita Electronics Corporation
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