Ueda Daisuke | Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd

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著作論文

Novel High Precision Optoelectronic Device Fabrication Technique Using Guided Fluidic Assembly
Dual-Wavelength High-Power Laser Diodes Fabricated by Selective Fluidic Self-Assembly
Properties of SiO_2-M_xO_y Composites Doped with the Europium(III) Di(1,10-phenanthroline) Complex
ORMOSIL Composite Phosphors Incorporated with Lanthanide Complexes
Reversible Valence Change of the Europium Ion Doped in Alkaline-earth Tetraborates
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN passivation(Session6: Power Devices)
Improved RF Characteristics of InGaP/GaAs HBTs by Using Novel Ledge Coupled Capacitor (LCC) Structure(Heterostructure Microelectronics with TWHM2003)
A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
A GaAs Single Voltage Controlled RF Switch IC
T-Cell Receptor Gene Structures of HLA-A26-restricted Cytotoxic T Lymphocyte Lines against Human Autologous Pancreatic Adenocarcinoma
High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
Dynamic Gate Voltage Characteristic of the Super Self-Aligned Shunt GaAs FET(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)

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