High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
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Ueda D
Matsushita Electronics Corp. Takatsuki‐shi Jpn
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Ueda D
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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MIYATSUJI Kazuo
Electronics Research Laboratory, Matsushita Electronics Corporation
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UEDA Daisuke
Electronics Research Laboratory, Matsushita Electronics Corporation
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MASAKI Kazuo
Anan College of Technology
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YAMAKAWA Shinya
Department of Electronic Engineering, Osaka University
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Ueda Daisuke
Electronics Research Laboratory Matsushita Electronics Corporation
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Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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Yamakawa Shinya
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Miyatsuji K
Electronics Research Laboratory Matsushita Electronics Corporation
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