Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-02-01
著者
-
TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
-
Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
SONODA Ken-ichiro
Department of Electronic Engineering, Osaka University
-
DUNHAM Scott
Department of Electrical, Computer, and Systems Engineering, Boston University
-
YAMAJI Mitsuru
Department of Electronic Engineering, Osaka University
関連論文
- Effective Cancer Targeting Using an Anti-tumor Tissue Vascular Endotheliumm specific Monoclonal Antibody (TES-23)
- Atomic configuration of boron pile-up at the Si/SiO2 interface
- Influences of Point and Extended Defects on As Diffusion in Si(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Process Variation Compensation Technique for 0.5-V Body-Input Comparator
- Process Variation Compensation Technique for Voltage-controlled Ring Oscillator
- Analytical Expression Based Design of a Low-Voltage FD-SOI CMOS Low-Noise Amplifier(Analog Circuit Techniques and Related Topics)
- Ultralow-Power Current Reference Circuit with Low Temperature Dependence(Building Block, Analog Circuit and Device Technologies)
- Watch-Dog Circuit for Quality Guarantee with Subthreshold MOSFET Current(New System Paradigms for Integrated Electronics)
- Watchdog Circuit for Product Degradation Monitor using Subthreshold MOS Current
- A New Analog Correlator Circuit for DS-CDMA Wireless Applications
- Error Analysis on Simultaneous Data Transfers in CDMA Wired Interface
- C-12-26 An Auto-sensitivity Control Circuit for DS-CDMA Receiver Circuit
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling
- Display Wall Empowered Visual Mining for CEOP Data Archive(Coordinated Enhanced Observing Period(CEOP))
- Initial CEOP-based Review of the Prediction Skill of Operational General Circulation Models and Land Surface Models(Coordinated Enhanced Observing Period(CEOP))
- Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
- Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
- Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate
- Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Role of Boron Atoms on Fluorine Diffusion under Various Stages of Annealing
- Boron Emission Rate from Si/SiO_2 Interface Traps to Bulk Silicon for Dose Loss Modeling
- Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
- Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
- A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs : Effects of Substrate Impurity(the IEEE International Coference on SISPAD '02)
- New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Two-Dimensional Simulation of Quantum Tunneling across Barrier with Surface Roughness
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Shubnikov de Haas Effect and Energy Band Structure of GaSb
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- Magnetophonon Resonance in In_xCa_As (x=0.53) : Physical Acoustics
- Temperature Dependence of the Effective Masses in III-V Semiconductors
- Magnetic Field Modulation Method for Measurements of Magnetophonon Effect
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- A Low Power 622MHz CMOS Phase-Locked Loop with Source Coupled VCO and Dynamic PFD (Special Section of Papers Selected from ITC-CSCC'96)
- Identification of Functionally Important Amino Acid Residues in Zymomonas mobilis Levansucrase
- A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance(Special lssue on Silicon RF Device & Integrated Circuit Technologies)
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Hot Electron Effect in Short n^+nn^ GaAs
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- A-3-1 A 5Msample/s 0.965-mW Switched-Capacitor Filter in 0.6-μm CMOS Technology
- High-Sensitivity SOI MOS Photodetector with Self-Amplification
- High Sensitivity Photodetector with Self-Amplification Capability
- A Low Power Analog Matched-Filter with Smart Sliding Correlation
- Wannier-Stark Localization in Superlattices
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin Scattering in GaP
- Addendum to Brillouin Scattering in GaSe
- Velocity and Attenuation of Injected Sound Waves into ZnSe at Room Temperature
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
- Magnetoacoustoelectric Instability in Epitaxial GaAs
- Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
- Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
- Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
- A-5-3 Speed-Power-Resolution Tradeoff in Analog Correlator Circuit
- Direct Observation of Gaussian-Type Energy Distribution for Hot Electrons in Silicon
- Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method
- Temperature Dependence of k_BTC Noise in "Coulomb Blockade" Regime
- Theoretical Study of Minority Carrier Lifetimes due to Auger Recombination in n-type Silicon
- A Short Channel HEMT Model for Circuit Simulation Based on Physical Structure
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Increasing Atmospheric Temperature in the Upper Troposphere and Cumulus Convection over the Eastern Part of the Tibetan Plateau in the Pre-Monsoon Season of 2004(Coordinated Enhanced Observing Period(CEOP))
- Application of Kelvin Technique in A Gas-Sensor Read-Out Circuit
- A Switched-Capacitor Programmable Gain Amplifier Using Dynamic Element Matching
- Asymmetric Single Electron Turnstile and Its Electronic Circuit Applications (Special Issue on Technology Challenges for Single Electron Devices)
- Physical Models for Deep Submicron Device Simulation
- Floating Voltage Reference Generator for A/D Converters
- Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures
- A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer
- Fine structures in Optical Absorption Spectra of MnO