Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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安田 直彦
岐阜大工
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Yasuda Naoki
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Quazi Deen
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Taniguchi K
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi C
Osaka Univ. Osaka Jpn
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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