Pressure-Induced Structural Phase Transition from Relaxor Phase to Antiferroelectric Phase in Disordered Pd (In_<1/2>Nb_<1/2>)O_3

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The rcresstrre der>endence in the disordered Pb(IntzzNbm,zz)Da (PIN) si?able crvstals (S=O.4(type(I)), 0.2 (type(II))) xvere investigated by X-ray diffraction. The presstrre dependence of thecell parauaaeters and the integrated intezasities of tlae (h/ 4 k /4 O) strperlattice reflections associatedxvitla the antiparallel shift of lead cations were meastured. The phase transition frorn the pseudo-cubic structure to the orthorhotnbic one wars observed at abotrt 0.4 GPa in the disordered-type(I)crystal. Btrt no phase transition was observed beloxv 0.8 GPa in the disordered-type(II) crystal.The disordered-type(I) crystal at higher presstrre than 0.4 GPa was isostrtrctural with the orderedcrystal at the atmospheric pressure. But with increasing pressure in the disordered-type(I)crystal, the integrated intensities of the (h/2 k/2 772) reflections associated xvith the In/Nbarrangeuaaent did not change. The antif'erroelectric phase was obtained not only by changing tlueIn/Nb arrangeuaaent xvith isothermal annealing btrt also Icy applying pressure above 0,4GPa intl'?e disordered-type(I) cr3'st?r1.
社団法人日本物理学会の論文
1999-03-15