Analytical Device Model of SOI MOSFETs Including Self-Heating Effect

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-12-30

著者

• 安田 直彦

  岐阜大工

• Yasuda Naoki

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• UENO Shuichi

  Department of Communication and Integrated Systems, Tokyo Institute of Technology

• Taniguchi K

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi C

  Osaka Univ. Osaka Jpn

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• YAMAGUCHI Yasuo

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• NISHIMURA Tadashi

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• Yamaguchi Y

  Inst. Fundamental Chemistry Kyoto Jpn

• Nishimura Tadashi

  Lsi Research & Development Laboratory Mitsubishi Electric Corporation

• Yamaguchi Yasuo

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Ueno Shuichi

  Department Of Communication And Integrated Systems Tokyo Institute Of Technology

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• Ueno Shuichi

  Department Of Biological Science Faculty Of Science Yamaguchi University

• Ueno Shuichi

  Department Of Electronic Engineering Osaka University

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