Pressure-Induced Dielectric Change from Relaxor to Antiferroelectric Behavior in Disordered Pb (In_1/2Nb1/2)O_3
スポンサーリンク
概要
- 論文の詳細を見る
The dielectric rrorerties of' Pb(Inn,zzNbuzz)Os (abbreviated as PIN) single crvstal were in-vestigated under hydrostatic presstrres trp to 0.7 GPa. The ordered PIN was confirmed to beantiferroelectric by observation of clear P-E dotrble hysteresis loops below the transition temperature. There is a striking pressure elect in the disordered PIN. The relaxor behavior becornesless notable with increasing presstrre and disappears at 0.4 GPa. At pressures above 0.4 GPa, thenorunal phase transition without dielectric dispersion in the low frequency range takes place andwith increasing pressure, the temperature T.., indicating the naaximum of'the dielectric constant,e7.., increases at a rate of 15OK/GPa and the e7.. decreases. Strch dielectric phenonaena withpressure are similar to those observed in antiferroelectric PbZrO3.
- 社団法人日本物理学会の論文
- 1997-07-15
著者
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安田 直彦
岐阜大工
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IWATA Makoto
Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya
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NOMURA Kazushige
Department of physics,Tokyo Metropolitan University
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YASUDA Naohiko
Electrical and Electronic Engineering Department, Gifu University
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OHWA Hidehiro
Electrical and Electronic Engineering Department, Gifu University
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Iwata Makoto
Department Of Applied Physics School Of Engineering Nagoya University
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Terauchi H
Kwansei Gakuin Univ. Sanda Jpn
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Terauchi Hikaru
Advanced Research Center Of Science School Of Science And Technology Kwansei Gakuin University
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Terauchi Hikaru
Department Of Physics School Of Science Kwansei-gakuin University
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Terauchi Hikaru
School Of Science Kwansei-gakuin University
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Terauchi Hikaru
Advanced Research Center Of Science Faculty Of Science And Technology Kwansei Gakuin University (arc
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Terauchi Hikaru
School Of Science Kwansei Gakuin University
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OOHASHI Jun
Electrical and Electronic Engineering Department,Gifu University
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NOMURA Kenji
School of Science,Kwansei-Gakuin University
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Ishibshi Yoshihiro
Department of Applied Physics,School of Engineering,Nagoya University
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Oohashi Jun
Electrical And Electronic Engineering Department Gifu University
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Nomura K
Univ. Tokyo Tokyo
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Nomura Kazushige
Department Of Physics Faculty Of Science University Of Tokyo
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Terauchi Hikaru
Department Of Phisics Kwansei-gakuin University
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Yasuda Naohiko
Electric and Information Department, Gifu University, Gifu 501-1193, Japan
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Terauchi Hikaru
Department of Physics, Kwansei-Gakuin University
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Terauchi Hikaru
School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan
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Ohwa Hidehiro
Electric and Information Department, Gifu University, Gifu 501-1193, Japan
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