Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-01
著者
-
RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
-
RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
-
Ryzhii M
Computational Nanoelectronics Laboratory University Of Aizu
-
Ryzhii V
Univ. Aizu Aizu-wakamatsu Jpn
-
Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
-
Ryzhii V
Univ. Aizu Fukushima
-
Hamaguchi C
Osaka Univ. Osaka Jpn
-
Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
SURIS Robert
A.F. Ioffe Physical-Technical Institute RAS
-
SURIS Robert
A.F.Ioffe Physical-Technical Institute
-
Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
関連論文
- Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
- Device Model for Graphene Nanoribbon Phototransistor
- Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
- Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Resonant Detection and Frequency Multiplication in Barrier-Injection Heterostructure Transistors
- Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
- Graphene nanoribbon phototransistor: proposal and analysis (Special issue: Solid state devices and materials)
- Analysis of the Photocurrent in Quantum Dot Infrared Photodetectors : Semiconductors
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device (Special Issue: Solid State Devices & Materials)
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Dark Current in Quantum Dot Infrared Photodetectors
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
- Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
- Optically Controlled Plasma Resonances in Induced-Base Hot-Electron Transistors
- High-Frequency Response of Intersubband Infrared Photodetectors with a Multiple Quantum Well Structure
- Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
- Modeling of Lateral Hot-Electron Phototransistor for Long-Wave Length Infrared Radiation
- Quantum Well Infrared Photodetector with Optical Output
- Injection and Population Inversion in Electrically Induced p-n Junction in Graphene with Split Gates
- Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Shubnikov de Haas Effect and Energy Band Structure of GaSb
- Admittance of a slot diode with a two-dimensional electron channel
- Infrared Hot-Electron Phototransistor
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- Magnetophonon Resonance in In_xCa_As (x=0.53) : Physical Acoustics
- Temperature Dependence of the Effective Masses in III-V Semiconductors
- Magnetic Field Modulation Method for Measurements of Magnetophonon Effect
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Hot Electron Effect in Short n^+nn^ GaAs
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- High-Sensitivity SOI MOS Photodetector with Self-Amplification
- High Sensitivity Photodetector with Self-Amplification Capability
- Wannier-Stark Localization in Superlattices
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin Scattering in GaP
- Addendum to Brillouin Scattering in GaSe
- Velocity and Attenuation of Injected Sound Waves into ZnSe at Room Temperature
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
- Magnetoacoustoelectric Instability in Epitaxial GaAs
- Harmonic Conversion of Acoustoelectrically Amplified Phonons in Photoconductive CdS Revealed by Brillouin Scattering
- Correlations of Acoustoelectric Instabilities with Inhomogeneities in CdS Measured by Optical Probe
- Magneto-Impurity Resonance in n-Type Germanium
- Magnetophonon Resonance in n-Type Germanium at Low Temperatures
- Magnetophonon Effect in p-InSb
- Magnetophonon Resonance and Fourier Analysis in n-GaAs
- Phonon-Assisted Tunneling in Metal-Oxide-Pb_Sn_xTe Junctions
- Magnetophonon Resonance of Hot Electrons in n-InSb at 77K
- Conductance through Laterally Coupled Quantum Dots
- Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_Ga_As/GaAs Quantum Dots ( Quantum Dot Structures)
- High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
- Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
- Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
- Unipolar Darlington Infrared Phototransistor
- Theoretical study of population inversion in graphene under pulse excitation (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Graphene Nanoribbon Phototransistor: Proposal and Analysis
- Effect of Photon Recycling in Pixelless Imaging Device
- Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
- Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures
- Theoretical Study of Population Inversion in Graphene under Pulse Excitation
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
- High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
- Terahertz Plasma Waves in Gated Graphene Heterostructures
- Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
- Microwave-Induced Suppression of Dissipative Conductivity and Its Shubnikov–de Haas Oscillations in Two-Dimensional Electron Systems: Effects of Dynamic Electron Localization and Plasma Reflection