Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
スポンサーリンク
概要
- 論文の詳細を見る
We propose a novel heterostructure device for generating of terahertz (THz) radiation based on the integration of a high-electron-mobility transistor (HEMT) and a quantum-well infrared photodetector (QWIP) and utilizing the photomixing of middle- or far-infrared optical signals. The operation of the photomixer under consideration is associated with the resonant excitation of plasma oscillations in the device HEMT section brought about by the transient photocurrent produced in the QWIP by incident infrared radiation. Using the developed device model for HEMT–QWIP photomixers which combines both the analytical description of electron processes and their ensemble Monte Carlo particle modeling, we evaluate the device performance.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
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Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
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Khmyrova Irina
Computational Nanoelectronics Laboratory University Of Aizu
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Shur Michael
Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute
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Ryzhii Victor
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electric Communication, Tohoku University, Sendai 980-8577, Japan
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Khmyrova Irina
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
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Shur Michael
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, AL 12180, U.S.A.
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Ryzhii Maxim
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
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Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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