Plasma Oscillations in Terahertz Photomixing High-Electron-Mobility Transistor Structure on p+-Substrate
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概要
- 論文の詳細を見る
The excitation of plasma oscillations in a channel of a high-electron-mobility transistor (HEMT) induced by optical illumination for terahertz (THz) generation requires a back contact to collect photogenerated holes. In particular, it could be a heavily doped p+-substrate. The effect of such a substrate on plasma oscillations in the channel is considered. Both possible reasons for oscillation damping, hole collisions and heavy hole–light hole transitions, are taken into account. We show that for properly designed structures, the influence of the p+-substrate on plasma oscillations can be negligible.
- Japan Society of Applied Physicsの論文
- 2004-04-15
著者
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SATOU Akira
Computer Solid State Physics Laboratory, University of Aizu
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Khmyrova Irina
Computational Nanoelectronics Laboratory University Of Aizu
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Satou Akira
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan
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Vyurkov Vladimir
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu 965-8580, Japan
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- Plasma Oscillations in Terahertz Photomixing High-Electron-Mobility Transistor Structure on p+-Substrate