Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact

スポンサーリンク

概要

• 論文の詳細を見る
• 2006-09-13

著者

• Otsuji Taiichi

  Research Institute Of Electrical Communication Tohoku University

• Otsuji Taiichi

  Japan Science And Technology Agency Crest

• RYZHII Victor

  Computational Nanoelectronics Laboratory, University of Aizu

• SATOU Akira

  Computer Solid State Physics Laboratory, University of Aizu

• SHUR Michael

  Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute

• Ryzhii Victor

  Computational Nanoelectronics Laboratory University Of Aizu

• Ryzhii V

  Univ. Aizu Fukushima

• Ryzhii Victor

  Univ. Aizu Aizu‐wakamatsu Jpn

• Shur Michael

  Department Of Electrical Electronics And System Engineering Rensselaer Polytechnic Institute

• Shur Michael

  Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute

• SATOU Akira

  Research Institute of Electrical Communication, Tohoku University

• Satou Akira

  Research Institute Of Electrical Communication Tohoku University

• Otsuji Taiichi

  Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Ryzhii Victor

  Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan

関連論文

• Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• Threshold behavior of photoinduced plasmons-resonant self-oscillation in a new interdigitated grating gates device (Special issue: Solid state devices and materials)
• Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
• Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• A grating-bicoupled plasma-wave photomixer with resonant-cavity enhanced structure
• Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
• Device Model for Graphene Nanoribbon Phototransistor
• Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
• Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
• Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
• Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Resonant Detection and Frequency Multiplication in Barrier-Injection Heterostructure Transistors
• Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
• Analysis of the Photocurrent in Quantum Dot Infrared Photodetectors : Semiconductors
• 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
• Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
• 招待講演 Theoretical study on graphene field-effect transistors (Electron devices)
• Spectrum of plasma oscillations in a slot diode with a two-dimensional electron channel
• Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
• Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device (Special Issue: Solid State Devices & Materials)
• Resonant terahertz photomixing in integrated HEMT-QWIP device
• Dark Current in Quantum Dot Infrared Photodetectors
• Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
• Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
• Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors
• Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
• High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
• Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
• Optically Controlled Plasma Resonances in Induced-Base Hot-Electron Transistors
• High-Frequency Response of Intersubband Infrared Photodetectors with a Multiple Quantum Well Structure
• Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
• Modeling of Lateral Hot-Electron Phototransistor for Long-Wave Length Infrared Radiation
• Quantum Well Infrared Photodetector with Optical Output
• Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
• Modulation Effects of Photocarriers on the Terahertz Plasma-Wave Resonance in High-Electron-Mobility Transistors under Interband Photoexcitation
• Injection and Population Inversion in Electrically Induced p-n Junction in Graphene with Split Gates
• Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
• Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures
• Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
• Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
• Unipolar Darlington Infrared Phototransistor
• An Intensity Modulator for Terahertz Electromagnetic Waves Utilizing Two-Dimensional Plasmon Resonance in a Dual-Grating-Gate High-Electron-Mobility Transistor
• Theoretical study of population inversion in graphene under pulse excitation (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Graphene Nanoribbon Phototransistor: Proposal and Analysis
• Effect of Photon Recycling in Pixelless Imaging Device
• Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
• Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
• Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures
• Theoretical Study of Population Inversion in Graphene under Pulse Excitation
• Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
• Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
• Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
• Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
• Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
• Characteristics of p-i-n terahertz and infrared photodiodes based on multiple graphene layer structures (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
• Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)
• Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
• Pulse Compression by Quasi-Steady Propagation along Switch Lines
• Detection of Modulated Terahertz Radiation Using Combined Plasma and Mechanical Resonances in Double-Carbon-Nanotube Device
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
• Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors
• AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
• Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
• Spectrum of Plasma Oscillations in Slot Diode with Two-Dimensional Electron Channel
• Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
• High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
• Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors
• Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device
• Plasma Oscillations in Terahertz Photomixing High-Electron-Mobility Transistor Structure on p+-Substrate
• Development of Solitons in Composite Right- and Left-Handed Transmission Lines Periodically Loaded with Varactors with Symmetrical Capacitance–Voltage Characteristics
• Terahertz Plasma Waves in Gated Graphene Heterostructures
• Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
• Microwave-Induced Suppression of Dissipative Conductivity and Its Shubnikov–de Haas Oscillations in Two-Dimensional Electron Systems: Effects of Dynamic Electron Localization and Plasma Reflection
• Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition
• Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures

もっと見る 閉じる

スポンサーリンク