Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
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概要
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We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.
- 2010-08-01
著者
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Suemitsu Tetsuya
Research Institute Of Electrical Communication Tohoku University
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EL MOUTAOUAKIL
Research Institute of Electrical Communication, Tohoku University
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KOMORI Tsuneyoshi
Research Institute of Electrical Communication, Tohoku University
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HORIIKE Kouhei
Research Institute of Electrical Communication, Tohoku University
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El Moutaouakil
Research Institute Of Electrical Communication Tohoku University
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Horiike Kouhei
Research Institute Of Electrical Communication Tohoku University
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Komori Tsuneyoshi
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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El Moutaouakil
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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