Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)

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概要

• 論文の詳細を見る

• We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers' density and drift velocity.

• 社団法人電子情報通信学会の論文
• 2010-12-09

著者

• Otsuji Taiichi

  Research Institute Of Electrical Communication Tohoku University

• Otsuji Taiichi

  Japan Science And Technology Agency Crest

• RYZHII Victor

  Computational Nanoelectronics Laboratory, University of Aizu

• Ryzhii Victor

  Computational Nanoelectronics Laboratory University Of Aizu

• Ryzhii V

  Univ. Aizu Fukushima

• BOUBANGA TOMBET

  Research Institute of Electrical Communication, Tohoku University

• SATOU Akira

  Research Institute of Electrical Communication, Tohoku University

• Boubanga Tombet

  Research Institute Of Electrical Communication Tohoku University

• Satou Akira

  Research Institute Of Electrical Communication Tohoku University

• 佐藤 昭

  Research Institute of Electrical Communication, Tohoku University

• Otsuji Taiichi

  Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Ryzhii Victor

  Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan

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