Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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HANABE Mitsuhiro
Research Institute of Electrical Communication, Tohoku University
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Moubarak Meziani
Research Institute Of Electrical Communication Tohoku University
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Sano Eiichi
Hokkaido Univ. Sapporo Jpn
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HANABE Mitsuhiro
Kyushu Institute of Technology
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Hanabe Mitsuhiro
Research Institute Of Electrical Communication Tohoku University
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Otsuji Taiichi
Tohoku Univ. Sendai Jpn
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Threshold behavior of photoinduced plasmons-resonant self-oscillation in a new interdigitated grating gates device (Special issue: Solid state devices and materials)
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