Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
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概要
- 論文の詳細を見る
An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gateleakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS= +4 V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3 V, resulting in the quasi-normally-off mode operation.
- 2004-06-15
著者
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ANANTATHANASARN Sanguan
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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NEGORO Noboru
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan
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Negoro Noboru
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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