Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy (<Special Issue> Scanning Tunneling Microscopy)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-06-30

著者

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Kasu M

  Ntt Corp. Atsugi Jpn

• Kasu Makoto

  Ntt Basic Research Laboratories Ntt Corporation

• Kasu Makoto

  Ntt Basic Research Laboratories

• KOBAYASHI Naoki

  NTT Basic Research Laboratories

• Kobayashi N

  The University Of Electro-communications Department Of Applied Physics And Chemistry

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Makimoto T

  Ntt Basic Research Laboratories

• Kobayashi Naoki

  Ntt Basic Laboratories Ntt Corporation

関連論文

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
• Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
• Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy
• RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
• Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
• Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
• Formation of Solid Solution of Al_Si_xN (0
• Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
• Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
• Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere
• Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
• Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
• Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• Electroluminescence of AlAs/GaAs Disordered Superlattices
• Photoluminescent Properties of AlAs/Al_xGa_As (x=0.5) Disordered Superlattices
• Absorption Spectra and Photoluminescent Processes of AlAs/GaAs Disordered Superlattices
• Proposal and Experimental Results of Disordered Crystalline Semiconductors
• Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
• Low-Temperature GaAs Metalorganic Chemical Vapor Deposition Using Dimethylamine Gallane and Arsine
• In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
• Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
• Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
• Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
• Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
• Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
• Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
• Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
• Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
• Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
• Short-Cavity Fabry-Perot Lasers Using Crystal Facets
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide
• Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
• High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
• GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
• Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
• In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
• Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
• GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
• In Situ Spectrum Observation of Ga Deposition Process during GaAs Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
• Spectral Observation of As-Stabilized GaAs Surfaces in Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
• InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
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• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
• 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
• In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
• Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
• Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
• Annealing Properties of Si-Atomic-Layer-Doped GaAs
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• p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
• Using Tertiary Butylamine for Nitrogen Doping during Migration-Enhanced Epitaxial Growth of ZnSe
• Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors
• Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy
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• In-Situ Control of Strained Heterostructure Growth
• Anisotropic Oscillation Properties in Fractional-Superlattice Quantum Wire Lasers
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• Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy
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• Arsenic-Doped n-Type Diamond Grown by Microwave-Assisted Plasma Chemical Vapor Deposition
• Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)
• Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
• Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
• Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Origin of Schottky Barrier Modification by Hydrogen on Diamond

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