Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
Metalorganic vapor phase epitaxy of Inks quantum welts on GaAs (111)B substrate is investigated by simultaneous monitoring of surface photo-absorption. To lower the growth temperature of the GaAs barrier, we adopted the flow-rate-modulation method and obtained specular morphology of GaAs at 600℃. Indium segregation is confirmed by surface photo-absorption and suppressed by introducing a capping layer grown under an arsenic rich condition. We obtained a one-monolayer InAs/GaAs quantum well, and confirmed its abrupt interfaces by TEM and a photoluminescence narrower than 6 meV.
- 社団法人応用物理学会の論文
- 1996-07-15
著者
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Nishida Toshio
Ntt Basic Research Laboratories
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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