Theoretical Study of Current and Barrier Height between Alurninum Tip and Silicon Surface in Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
The first-principles calculations for the electronic structure of the aluminum tip and the silicon surface in scanning tunneling microscopy are performed using the recursiorn-transfer matrix method, which is an effective method for exploring the microscopic electronic states of a bielectrode system under electric field and current. The atomic-scale current distribution and the potential barrier between the tip and the surface are presented. It is revealed that the opening of a hole in the potential barrier occurs when the tip-sample distance is 10 a.u. at a surface bias of +2.0 V.
- 社団法人応用物理学会の論文
- 1996-06-30
著者
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Kobayashi Nobuhiko
Depart. Dermatol. Nara Medical Univ.
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Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
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Hirose Kenji
Nec Research Institute
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Tsukada Masaru
Department Of Nano-science And Nano-technology Advanced School Of Science And Engineering Waseda Uni
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HIROSE Kenji
Fundamental and Environmental Research Laboratories, NEC Corporation
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Tsukada Masaru
Department of Nano-Science and Nano-Engineering, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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