Increased Electrical Activity of Mg-Acceptors in Al_xGa_<1-x>N/GaN Superlattices
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概要
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We grew uniformly Mg-doped Al_xGa_<1-x>N/GaN superlattices (SLs) by low-pressure metalorganic vapor phase epitaxy and investigated the electrical properties of these SLs parallel to the SL plane. Sheet hole concentration depends strongly on the SL period thickness and Al mole fraction, and the maximum sheet concentration is 8×10^<12> cm^<-2> for Al_xGa_<1-x>N/GaN (240 Å/120 Å) SLs in the Al mole fraction range between 0.15 and 0.3, which corresponds to the hole concentration of 3×10^<18> cm^<-3>. One possible explanation for this high sheet hole concentration is that the strain-induced piezoelectric field greatly increases the electrical activity of the relatively deep Mg-acceptors in the SLs.
- 社団法人応用物理学会の論文
- 1999-09-15
著者
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Kumakura K
Ntt Basic Research Laboratories
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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