Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium
スポンサーリンク
概要
- 論文の詳細を見る
Using dimethylhydrazine (DMHy) as a group V source, we grew hexagonal GaN layers on (111)B GaAs substrates by low-pressure metalorganic vapor phase epitaxy. The surface morphology of the hexagonal GaN layers and the carbon incorporation in them strongly depend on the V/III ratio and the reactor pressure. A flat GaN surface can be obtained at the V/III ratio of 60 and the substrate temperature of 850℃. The carbon concentration decreases with increasing reactor pressure and the minimum concentration is 2×10^<19> cm^<-3> for hexagonal GaN grown at 300 Torr. Low-temperature photoluminescence measurements reveal that the band edge emission for the GaN grown at 300 Torr is dominant compared with that of a deep level.
- 社団法人応用物理学会の論文
- 1997-05-15
著者
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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KOBAYASHI Yasuyuki
NTT Basic Research Laboratories, NTT Corporation
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories Ntt Corporation
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Scholz F
Univ. Stuttgart Stuttgart Deu
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SCHOLZ Ferdinand
NTT Basic Research Laboratories.
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories.
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Kobayashi Naoki
Ntt Basic Research Laboratories.
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