In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
GaAs growth process is investigated by in situ optical methods during metalorganic chemical vapor deposition. Formation and annihilation of Ga droplets are ovserved on GaAs surface, using surface photo-absorption and scattered light observations. When triethylgallium is supplied in excess of one Ga atomic layer coverage to the As-stabilized surface, the scatterd light is observed after the saturation of reflectivity due to surface photo-absorption, indicating Ga droplet formation on the surface. AsH_3 supply to the surface with Ga droplets results in the annihilation of these droplets followed by the formation of the As-stabilied surface. These are observed, respectively, from the decay of scattered light intensity and subsequent decay of reflectivity of the surface phto-absorption.
- 社団法人応用物理学会の論文
- 1991-05-15
著者
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Yamauchi Yoshibumi
Deparment Of Electrical And Electronic Engineering Iwate University
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HORIKOSHI Yoshiji
NTT Basic Research Laboratories
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YAMAUCHI Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Yamauchi Y
Shizuoka Inst. Sci. And Technol. Fukuroi Jpn
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Yamauchi Yoshiharu
Ntt Basic Research Laboratories
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Horikoshi Yoshiji
NTT Basic Reseach Laboratories
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