Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• KUMAKURA Kazuhide

  NTT Basic Research Laboratories, NTT Corporation

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Kasu Makoto

  Ntt Basic Research Laboratories Ntt Corporation

• YAMAUCHI Yoshiharu

  NTT Basic Research Laboratories, NTT Corporation

• TANIYASU Yoshitaka

  NTT Basic Research Laboratories, NTT Corporation

• KIDO Takatoshi

  Shonan Institute of Technology

• MATSUMOTO Nobuo

  Shonan Institute of Technology

関連論文

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• Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
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• Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere
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