Formation of Solid Solution of Al_<1-x>Si_xN (0<x≤12%) Ternary Alloy(Structure and Mechanical and Thermal Properties of Condensed Matter)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-10-01
著者
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Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
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Kasu Makoto
Ntt Basic Research Laboratories
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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TANIYASU Yoshitaka
NTT Basic Research Laboratories, NTT Corporation
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Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Kobayashi Naoki
Ntt Basic Research Laboratories Ntt Corporation
関連論文
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- Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
- Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
- Formation of Solid Solution of Al_Si_xN (0
- Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
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