Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
A hexagonal facet (HF) GaAs/AlGaAs laser with rectangular optical waveguides is proposed and its preliminary lasing characteristics are presented. The rectangular waveguide is parallel to one side of the HF laser and consists of the same (111)B growth plane and (110) sidewall facets as the HF laser structure. The number of rectangular waveguides extending from one HF laser is changed from one to four to study the effect of the waveguide on lasing characteristics by optical pumping at room temperature. The lasing light can be efficiently taken out from the point of the rectangular waveguides in all laser structures. These lasers keep a ring cavity mode of inscribed hexagon even if the waveguide structures couple with the HF laser structure.
- 社団法人応用物理学会の論文
- 1995-01-01
著者
-
KOBAYASHI Naoki
NTT Basic Research Laboratories
-
ANDO Seigo
NTT Basic Research Laboratories
-
ANDO Hiroaki
NTT Basic Research Laboratories
-
Ando H
Ntt Basic Research Laboratories
-
Ando S
Ntt Basic Research Laboratories
-
Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
関連論文
- GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
- Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
- Formation of Solid Solution of Al_Si_xN (0
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Carbom Atomic Layer Doping in AlGaAs by Metalorganic Chemical VaporDeposition and Its Application to a P-Type Modulation Doped Structure
- Low-Temperature GaAs Metalorganic Chemical Vapor Deposition Using Dimethylamine Gallane and Arsine
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
- Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
- Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
- Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
- Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
- Short-Cavity Fabry-Perot Lasers Using Crystal Facets
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide
- Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
- Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
- Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
- In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
- Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
- GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
- In Situ Spectrum Observation of Ga Deposition Process during GaAs Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
- Spectral Observation of As-Stabilized GaAs Surfaces in Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
- Effects of Dimensionality on Radiative Recombination Lifetime of Excitons in Thin Quantum Boxes of Intermediate Regime between Zero and Two Dimensions ( Quantum Dot Structures)
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium
- Formation of a 100-μm-wide Stepfree GaAs (111)B Surface Obtained by Finite Area Metalorganic Vapor Phase Epitaxy
- Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
- Using Tertiary Butylamine for Nitrogen Doping during Migration-Enhanced Epitaxial Growth of ZnSe
- Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors
- Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Lateral-Size Control of Trench-Buried Quantum Wires Using GaAs/AlAs Superlattice Layers
- GaAs/AlAs Trench-Buried Quantum Wires (
- Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
- 4) Development of A Lossless Video Coding System Using Motion Compensation([マルチメディア情報処理研究会映像表現研究会ネットワ-ク映像メディア研究会画像情報システム研究会]合同)
- Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Enhancement of the Excitonic Effects in Semiconductor Thin Quantum Boxes with Large Lateral Size
- Electron Conduction in an Atomic-Layer-Doped GaAs Plane : Electrical Properties of Condensed Matter
- In-Situ Control of Strained Heterostructure Growth
- Flat Surfaces and Interfaces in AlN/GaN Heterostructures and Superlattices Grown by Flow-Rate Modulation Epitaxy
- Anisotropic Oscillation Properties in Fractional-Superlattice Quantum Wire Lasers
- Step-Free Surface Grown on GaAs (111)B Substrate by Localized Area Metalorganic Vapor Phase Epitaxy
- Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy
- In Situ Interface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
- As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption
- Growth-Rate Self-Limitation Mechanism in InP Atomic Layer Epitaxy Studied by Surface Photo-Absorption
- Pyrolysis of Organo-As Precursors Studied by Surface Photo-Absorption
- Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
- Decomposition Process of Alane and Gallane Compounds in Metal-Organic Chemical Vapor Deposition Studied by Surface Photo-Absorption
- High Two-Dimensional Electron Mobility in Si Atomic-Layer Doped N-AlGaAs/GaAs Grown by Metalorganic Chemical Vapor Deposition
- Increased Electrical Activity of Mg-Acceptors in Al_xGa_N/GaN Superlattices
- Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
- Chemical Shift in Optical Reflection Spectra Observed During III-V Semiconductor Metalorganic Chemical Vapor Deposition Growth by Surface Photo-Absorption Method
- Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption Method
- Theoretical Study of Silicon Adatom Transfer from the Silicon Surface in Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- Theoretical Study of Current and Barrier Height between Alurninum Tip and Silicon Surface in Scanning Tunneling Microscopy
- Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-Absorption
- Triangular-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Novel Hexagonal-Facet GaAs/AlGaAs Laser Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Extremely Sharp Photoluminescence Lines from Nitrogen Atomic-Layer-Doped AlGaAs/GaAs Single Quantum Wells
- Highly Transparent Structure for Nitride Ultraviolet Light Emitting Diodes
- Ohmic Contact to $p$-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE