Lateral-Size Control of Trench-Buried Quantum Wires Using GaAs/AlAs Superlattice Layers
スポンサーリンク
概要
- 論文の詳細を見る
We demonstrated the lateral-size control of GaAs/AlAs trench-buried quantum wires (QWRs) in the region below 20 nm by using GaAs/AlAs superlattice layers (SLs). Scanning electron microscopy images and photoluminescence properties of the trench-buried QWRs revealed that the trench width can be controlled by varying the number of SLs and reduced to about 13 nm by growing 7 pairs of SLs. The GaAs wires in the trenches have a tendency to grow so as to maintain a constant cross-sectional area, which leads to reduction of the energetic broadening of the quantum sub-levels caused by pattern size fluctuation.
- 社団法人応用物理学会の論文
- 1995-08-30
著者
-
ANDO Seigo
NTT Basic Research Laboratories
-
Kanbe H
Ntt Basic Res. Lab. Kanagawa Jpn
-
Kanbe Hiroshi
Ntt Basic Research Laboratories
-
Sogawa T
Ntt Basic Res. Lab. Kanagawa Jpn
-
Sogawa Tetsuomi
Ntt Basic Research Laboratories
-
Ando S
Ntt Basic Research Laboratories
関連論文
- GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
- Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
- Short-Cavity Fabry-Perot Lasers Using Crystal Facets
- Triangular-Facet Lasers Coupled by a Rectangular Optical Waveguide
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- Distinctive feature of ripening during growth interruption of InGaAs quantum dot epitaxy using Bi as a surfactant (Special issue: Microprocesses and nanotechnology)
- -Oriented In_Ga_As Nanowires Laterally Grown on GaAs (311)B Substrate in Au-Catalyzed Vapor-Liquid-Solid Mode
- Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate
- InP Nodes in GaP-based Free-standing Nanowires on Si(111)
- Fabrication of a Nanometer-Scale GaAs Ridge Structure with a 92-MHz Anode-Coupled Reactive Ion Etcher Using Cl_2/N_2 Mixed Plasmas
- Lateral-Size Control of Trench-Buried Quantum Wires Using GaAs/AlAs Superlattice Layers
- GaAs/AlAs Trench-Buried Quantum Wires (
- Hexagonal-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching
- Enhancement of the Excitonic Effects in Semiconductor Thin Quantum Boxes with Large Lateral Size
- Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate
- Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
- Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
- Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source
- Vertically Aligned InP Nanowires Grown via the Self-Assisted Vapor-Liquid-Solid Mode
- Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
- Triangular-Facet Laser with Optical Waveguides Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Novel Hexagonal-Facet GaAs/AlGaAs Laser Grown by Selective Area Metalorganic Chemical Vapor Deposition
- Direct Biexciton Creation with Two-Photon Excitation for Ideal Entangled Photon Pair Emissions in Optically Active Quantum Dots