Sogawa Tetsuomi | Ntt Basic Research Laboratories

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著作論文

GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation
Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
Distinctive feature of ripening during growth interruption of InGaAs quantum dot epitaxy using Bi as a surfactant (Special issue: Microprocesses and nanotechnology)
-Oriented In_Ga_As Nanowires Laterally Grown on GaAs (311)B Substrate in Au-Catalyzed Vapor-Liquid-Solid Mode
Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate
InP Nodes in GaP-based Free-standing Nanowires on Si(111)
Lateral-Size Control of Trench-Buried Quantum Wires Using GaAs/AlAs Superlattice Layers
GaAs/AlAs Trench-Buried Quantum Wires (
Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching
Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate
Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source
Vertically Aligned InP Nanowires Grown via the Self-Assisted Vapor-Liquid-Solid Mode
Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
Direct Biexciton Creation with Two-Photon Excitation for Ideal Entangled Photon Pair Emissions in Optically Active Quantum Dots

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