Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate
スポンサーリンク
概要
- 論文の詳細を見る
We structurally, compositionally, and optically characterize vertically aligned AlAs/GaAs/GaP heterostructured nanowires (NWs) grown on a Si substrate used for the integration of an optically active material into Si-based technology and its band-gap engineering. The NWs were grown using Au colloidal nanoparticles as catalysts via the vapor–liquid–solid mode. By alternately changing the source material between Ga and Al, we grew GaAs/AlAs/GaAs/AlAs/GaAs NWs with a well-controlled periodic structure and composition on a GaP segment, which was epitaxially grown on a Si substrate. No dislocations induced by the lattice mismatch were found in the GaAs segment of the NWs grown on the GaP segment despite a lattice mismatch of as large as 4%. This is because the NWs have a particular columnar structure with nanoscale diameters and can therefore relax laterally and accommodate a high strain. Stacking faults exist in zinc-blende-structured GaP and GaAs segments, while the AlAs segment has a pure wurtzite crystal structure without any stacking faults. It is found that the stacking fault in III–V NWs is significantly dependent on the stacking fault energy and ionicity. With increasing ionicity, stacking faults can be more easily introduced, and these NWs tend to have a wurtzite crystal structure. In addition, owing to the high surface nonradiative recombination rate resulting from the surface states on the GaAs NW surface, the excitonic emission of photoluminescence from the bare GaAs NW segment has a decay time of as short as 30 ps. With the growth of an AlGaAs capping layer and GaAs outer shell layer, the decay time of the excitonic emission increased 46-fold, indicating an excellent passivation effect on the GaAs segment surface.
- 2010-01-25
著者
-
Zhang Guoqiang
Ntt Basic Research Laboratories Ntt Corporation
-
Tateno Kouta
Ntt Basic Research Laboratories Ntt Corporation
-
Gotoh Hideki
Ntt Basic Research Laboratories
-
Sogawa Tetsuomi
Ntt Basic Research Laboratories
-
Nakano Hidetoshi
Ntt Basic Research Laboratories
-
Sogawa Tetsuomi
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Zhang Guoqiang
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Gotoh Hideki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Tateno Kouta
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
- Zn_Cd_xO/ZnO Heterostructures for Visible Light Emitting Devices
- Controlling Quality Factor in Micromechanical Resonators by Carrier Excitation
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- Dependence of surface harmonics generation properties on carrier-envelope phase of few-cycle laser field
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Efficient Carrier-Envelope Offset Locking with a Simplified Configuration of an $f$-to-$2f$ Interferometer
- Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots
- Effects of Dimensionality on Radiative Recombination Lifetime of Excitons in Thin Quantum Boxes of Intermediate Regime between Zero and Two Dimensions ( Quantum Dot Structures)
- Simultaneous Measurement of Absorption and X-Ray Emission from Preformed Plasma Generated by Ultrashort Prepulse
- Spatially Ordered Self-Assembled Quantum Dots with Uniform Shapes Fabricated by Patterning Nanoscale SiN Islands
- Exciton and biexciton emissions from single GaAs quantum dots in (Al,Ga)As nanowires
- Multi-quantum structures of GaAs/AlGaAs Free-standing Nanowires
- Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates
- Distinctive feature of ripening during growth interruption of InGaAs quantum dot epitaxy using Bi as a surfactant (Special issue: Microprocesses and nanotechnology)
- -Oriented In_Ga_As Nanowires Laterally Grown on GaAs (311)B Substrate in Au-Catalyzed Vapor-Liquid-Solid Mode
- Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate
- InP Nodes in GaP-based Free-standing Nanowires on Si(111)
- Anisotropy in Ultrafast Carrier and Phonon Dynamics in p-Type Heavily Doped Si
- Enhanced Water-Window X-Ray Pulse Generation from Femtosecond-Laser-Produced Plasma with a Carbon Nanotube Target
- Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant
- Lateral-Size Control of Trench-Buried Quantum Wires Using GaAs/AlAs Superlattice Layers
- GaAs/AlAs Trench-Buried Quantum Wires (
- Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching
- Enhancement of the Excitonic Effects in Semiconductor Thin Quantum Boxes with Large Lateral Size
- Structural, Compositional, and Optical Characterizations of Vertically Aligned AlAs/GaAs/GaP Heterostructure Nanowires Epitaxially Grown on Si Substrate
- InGaN quantum wells with small potential fluctuation
- Tunable Terahertz Electromagnetic Wave Generation Using Birefringent Crystal and Grating Pair
- Dot-Height Dependence of Photoluminescence from ZnO Quantum Dots
- Femtosecond Laser-Excited Two-Photon Fluorescence Microscopy of Surface Plasmon Polariton (Special Issue : Solid State Devices and Materials (2))
- Photoluminescence Dynamics of GaAs/AlAs Quantum Wells Modulated by Surface Acoustic Waves
- Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source
- Vertically Aligned InP Nanowires Grown via the Self-Assisted Vapor-Liquid-Solid Mode
- Dependence of Electron $g$-Factor on Barrier Aluminum Content in GaAs/AlGaAs Quantum Wells
- Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
- Characterization of Individual GaAs/AlGaAs Self-Standing Nanowires by Cathodoluminescence Technique using Transmission Electron Microscope
- Highly Selective ZEP/AlGaAs Etching for Photonic Crystal Structures Using Cl2/HI/Xe Mixed Plasma
- Characterization of Wurtzite Zn1-xCdxO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Measurement of the True Value of the Carrier-Envelope Phase of a Few-Cycle Laser Pulse by the Interference between Second and Third Harmonics from the Surface of a Solid
- Exciton and Biexciton Emissions from Single GaAs Quantum Dots in (Al,Ga)As Nanowires
- Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse Vapor–Liquid–Solid Mechanism
- Multi-Quantum Structures of GaAs/AlGaAs Free-Standing Nanowires
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Direct Biexciton Creation with Two-Photon Excitation for Ideal Entangled Photon Pair Emissions in Optically Active Quantum Dots
- Growth of InP nanowires on graphene-covered Fe