Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots
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概要
- 論文の詳細を見る
Exciton spin relaxation dynamics in zero dimensional semiconductor quantum dots is studied. Exciton spin relaxation behavior in disk-shaped InGaAs quantum dots is measured by monitoring the time-evolution of exciton luminescence with resolving polarization. The spin relaxation time is studied in terms of the lateral extent of the dot. The spin relaxation time is found to depend strongly on the lateral extent of the dot. The spin relaxation time in quantum dots extending 30–40 nm is as long as 1 ns at 4 K, which is almost twice as long as the recombination lifetime and considerably longer than that in quantum wells. The spin relaxation time decreases with rising temperature and it became longer in quantum dots with larger exciton energy level separation. These results suggest the importance of the exciton–acoustic phonon interaction on spin relaxation in a semiconductor quantum dot at low temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Gotoh Hideki
Ntt Basic Research Laboratories Ntt Corporation
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Gotoh H
Research Center Mitsubishi Kasei Co.
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Temmyo Jiro
Research Institute of Electronics, Shizuoka University・Graduate School of Electronic Science and Tec
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Gotoh H
Ntt Corp. Kanagawa Jpn
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KAMADA Hidehiko
NTT Basic Research Laboratories, NTT Corporation
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Temmyo Jiro
Photonic Devices Laboratory Research Institute Of Electronics Shizuoka University
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Hiroaki Ando
Department Of Physics Konan University
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Ando Hiroaki
Department Of Chemistry Tokyo Institute Of Technology
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Kamada Hidehiro
Ntt Opto-electronics Laboratories
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Kamada Hidehiko
Ntt Basic Research Laboratories
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Gotoh Hideki
Ntt Basic Research Laboratories
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Ando Hiroaki
Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi
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Temmyo Jiro
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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