Perfect Spatial Ordering of Self-Organized InGaAs/AlGaAs Quantum Disks on GaAs (311)B Substrate with Silicon-Nitride Dot Array
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概要
- 論文の詳細を見る
To control the position of self-organized InGaAs/AlGaAs quantum disks on a GaAs (311)B substrate, the use of fine silicon nitride dot array was examined. The pentagonally shaped hollow arrays were formed on the metal-organic vapor phase epitaxy grown AlGaAs layer by buried SiN dots due to the competition between the facet and the lateral growth. The following InGaAs layer grew preferentially in these hollows and self-organized quantum disks were formed during growth interruption. Successive growth of AlGaAs/InGaAs epi-layers induced the stacking of quantum disks right on top of the bottom disks. The upper quantum disks were perfectly spatially ordered when the pitch of the array was matched with the self-organized growth mode, with a simultaneous achievement of lateral positioning.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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TEMMYO Jiro
Photonic Devices Laboratory, Research Institute of Electronics, Shizuoka University
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Kuramochi Eiichi
Ntt Basic Research Laboratories Ntt Corporation
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Kuramochi Eiichi
Ntt Opto-electronics Laboratories
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Kuramochi Eiichi
The Author Is With Ntt Basic Research Laboratories
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TAMAMURA Toshiaki
NTT Opto-electronics Laboratories 3-1
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KAMADA Hidehiko
NTT Basic Research Laboratories, NTT Corporation
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TEMMYO Jiro
NTT Opto-electronics Laboratories
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Temmyo Jiro
Photonic Devices Laboratory Research Institute Of Electronics Shizuoka University
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Kamada Hidehiro
Ntt Opto-electronics Laboratories
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Kamada Hidehiko
Ntt Basic Research Laboratories
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TAMAMURA Toshiaki
NTT Electronics
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Tamamura T
Ntt Electronics
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Tamamura Toshiaki
Ntt Opto-electronics Laboratories
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