High-Aspect-Ratio Nanometer-Pattern Fabrication Using Fullerene-Incorporated Nanocomposite Resists for Dry-Etching Application

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This paper presents the improved performance of a nanocomposite resist system that incorporates an unseparated mixture of fullerenes C_<60> and C_<70> into ZEP520, a positive electron-beam resist, particularly focusing on the enhancement of mechanical strength and dry-etching resistance. This system exhibits similar improvements to that of a pure C_<60>-incorporated system; 90-nm-pitch high-aspect-ratio (<5) resist patterns without pattern collapse and a 10-% enhancement of dry-etching resistance are obtained in a 10-wt% fullerene mixture-incorporated system due to the reinforcement effect induced by the fullerene incorporation. In addition, 80-nm-pitch resist patterns are successfully transferred to SiN film by C_2F_6-reactive ion etching without any harmful effects. The use of an unseparated mixture of C_<60> and C_<70>, which is commercially available at a much lower price than pure C_<60>, will greatly facilitate the practical application of the nanocomposite resist system from the economic point of view.
社団法人応用物理学会の論文
1997-12-30