Synchrotron Radiation Lithography for DFB Laser Gratings
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概要
- 論文の詳細を見る
The synchrotron radiation lithography process of grating fabrication for distributed feedback (DFB) laser diodes is described. By finely controlling the field size in electron beam writing of the X-ray mask, the grating period can be arbitrarily varied with an accuracy of less than 0.1 nm . Gratings of 0.24-$\mu$m period with a $\lambda$/4 shift are formed in the Ta absorber X-ray mask, and transferred to the laser substrate by SR exposure. This process is successfully applied to the fabrication of 20-wave-length DFB-LD arrays.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-11-20
著者
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OZAWA Akira
NTT LSI Laboratories
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YOSHIHARA Hideo
NTT LSI Laboratories
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NAKAO Masashi
NTT Opto-electronics Laboratories
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SAITO Yasunao
NTT LSI Laboratories 3-1
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Tamamura Toshiaki
Ntt Opto-electronics Laboratories
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Nishida Toshio
Ntt Opto-electronics Laboratories
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Nishimura Kazuyoshi
NTT Opto-electronics Laboratories, 3-1, Wakamiya, Morinosato, Atsugi Kanagawa 243-01
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Nakao Masashi
NTT Opto-electronics Laboratories, 3-1, Wakamiya, Morinosato, Atsugi Kanagawa 243-01
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Tamamura Toshiaki
NTT Opto-electronics Laboratories, 3-1, Wakamiya, Morinosato, Atsugi Kanagawa 243-01
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