Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
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概要
- 論文の詳細を見る
A non-destructive characterization method for epitaxial wafers of vertical-cavity surface-emitting laser (VCSEL) before device processing, and a way for reproducible fabrication of the distributed Bragg reflector (DBR) using this method, are discussed. The DBR, active layer, and cavity length are successfully characterized by using YAG-laser-excited PL measurement and reflectivity-spectrum measurement. For a buried-heterostructure VCSEL, cavity length is evaluated by using a newly assembled small-area-spectral-reflectance measurement system. It is also shown that the cavity length can be tuned by using chemical etching.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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KONDO Yasuhiro
NTT Opto-electronics Laboratories
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OKAMOTO Hiroshi
NTT Opto-electronics Laboratories
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NAKAO Masashi
NTT Opto-electronics Laboratories
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TADOKORO Takashi
NTT Opto-electronics Laboratories
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Tadokoro Takashi
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Nakao Masashi
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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Kondo Yasuhiro
NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan
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