NAKAO Masashi | NTT Opto-electronics Laboratories

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概要

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著作論文

Spot-size Converter Integrated Laser Diodes (SS-LDs) (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
Synchrotron Radiation Lithography for DFB Laser Gratings : Lithography Technology
GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes
Properties of In_Al_AS and In_Ga_AS/In_Al_AS Quantum Well Structures Grown on (111)B InP Substrates by Molecular Beam Epitaxy
Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
Ideally Ordered Metal Hole Arrays with High Aspect Ratios Prepared from Anodic Porous Alumina
High-Performance 1.5-μm Distributed Feed Back Lasers with Strained Multi-Quantum Well Structure Grown by Metalorganic Molecular Beam Epitaxy (Chemical Beam Epitaxy)
Photonic Band Gap in Anodic Porous Alumina with Extremely High Aspect Ratio Formed in Phosphoric Acid Solution
Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators
Synthesis of Diamond Cylinders with Triangular and Square Cross Sections Using Anodic Porous Alumina Templates
Ideally Ordered Anodic Porous Alumina Mask Prepared by Imprinting of Vacuum-Evaporated Al on Si : Instrumentation, Measurement, and Fabrication Technology
Application of Atomic Force Microseopy to the Study of Size Fluetuation in E-Beam Patterned Quantum Wire Structures
Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
Large Quantum-Confined Stark-Effect in Quaternary InGaAlAs Quantum Wells
Synchrotron Radiation Lithography for DFB Laser Gratings

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